Method and apparatus for manufacturing semiconductor device
US8481382B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2012 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Nov 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0184
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and apparatus for manufacturing a semiconductor device using a PVD method and enabling achievement of a desired effective work function and reduction in leak current without increasing an equivalent oxide thickness. A method for manufacturing a semiconductor device in an embodiment of the present invention includes the steps of: preparing a substrate on which an insulating film having a relative permittivity higher than that of a silicon oxide film is formed; and depositing a metal nitride film on the insulating film. The metal nitride depositing step is a step of sputtering deposition in an evacuatable chamber using a metal target and a cusp magnetic field formed over a surface of the metal target by a magnet mechanism in which magnet pieces are arranged as grid points in such a grid form that the adjacent magnet pieces have their polarities reversed from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.