Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8481396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2010 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Mar 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8265
Abstract
Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon-based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first cross-sectional area, coupled to a reversible resistivity switching material, such as aC, having a region that has a second cross-sectional area smaller than the first cross-sectional area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.