Inventor · Dublin, CA, US

Thomas Jongwan Kwon

26Patents
5h-index
47Co-inventors
65Inventor score

Filing activity: Mar 23, 2004 → Nov 28, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9379124B2 Vertical floating gate NAND with selectively deposited ALD metal films Electricity 18 Active
US9524779B2 Three dimensional vertical NAND device with floating gates Electricity 18 Active
US9806090B2 Vertical floating gate NAND with selectively deposited ALD metal films Electricity 14 Active
US10622214B2 Tungsten defluorination by high pressure treatment Electricity 14 Active
US6992346B2 Integrated circuit devices with metal-insulator-metal capacitors Electricity 5 Expired
US9991118B2 Hybrid carbon hardmask for lateral hardmask recess reduction Electricity 3 Active
US10157787B2 Method and apparatus for depositing cobalt in a feature Electricity 2 Active
US10246772B2 Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices Electricity 2 Active
US8481396B2 Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same Electricity 1 Active
US10410864B2 Hybrid carbon hardmask for lateral hardmask recess reduction Electricity 1 Active
US12127397B2 Memory device and method for forming the same Electricity 0 Active
US10825681B2 3D CTF integration using hybrid charge trap layer of sin and self aligned SiGe nanodot Electricity 0 Active
US10879177B2 PVD deposition and anneal of multi-layer metal-dielectric film Chemistry; Metallurgy 0 Active
US11127760B2 Vertical transistor fabrication for memory applications Electricity 0 Active
US11515324B2 3D NAND structures with decreased pitch Electricity 0 Active
US12108604B2 Vertical transistor fabrication for memory applications Electricity 0 Active
US10446392B2 Self-aligned nanodots for 3D NAND flash memory Electricity 0 Active
US10714388B2 Method and apparatus for depositing cobalt in a feature Electricity 0 Active
US11384428B2 Carbon layer covered mask in 3D applications Chemistry; Metallurgy 0 Active
US12317493B2 Methods of forming 3D NAND structures with decreased pitch Electricity 0 Active
US11164882B2 3-D NAND control gate enhancement Electricity 0 Active
US11622489B2 3-D NAND control gate enhancement Electricity 0 Active
US11365476B2 Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices Electricity 0 Active
US12178036B2 Method for forming memory and memory Electricity 0 Active
US12342535B2 Memory forming method and memory Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.