Method of and apparatus for active energy assist baking
US8481412B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2010 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Nov 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02203
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of and apparatus for forming interconnects on a substrate includes etching patterns in ultra-low k dielectric and removing moisture from the ultra-low k dielectric using active energy assist baking. During active energy assist baking, the ultra-low k dielectric is heated and exposed to light having only wavelengths greater than 400 nm for about 1 to about 20 minutes at a temperature of about 300 to about 400 degrees Celsius. The active energy assist baking is performed after wet-cleaning or after chemical mechanical polishing, or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.