Apparatus and method for multi-directionally scanning a beam of charged particles
US8481959B2 · kind B2 · utility
1Cited by
14References
21Claims
0Family size
Inventor
Key dates
| Filing date | Feb 15, 2011 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Apr 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30472
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.