Patent · US Active

Magnetic element utilizing protective sidewall passivation

US8482966B2 · kind B2 · utility

36Cited by

44References

23Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Seung H. Kang · San Diego, US
Sei Seung Yoon · San Diego, US

Key dates

Filing date	Sep 24, 2008
Grant date	Jul 9, 2013
Priority date	—
Expiry date	Jul 15, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/10
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Exemplary embodiments of the invention are directed to magnetic elements including a passivation layer for isolation from other on-chip elements. One embodiment is directed to an apparatus comprising a magnetic tunnel junction (MTJ) element. The MTJ element comprises: a first ferromagnetic layer; a second ferromagnetic layer; an insulating layer disposed between the first and second ferromagnetic layers; and an MTJ passivation layer forming protective sidewalls disposed adjacent to the first ferromagnetic layer, the second ferromagnetic layer, and the insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.