Non-volatile magnetic tunnel junction transistor
US8482968B2 · kind B2 · utility
15Cited by
6References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 13, 2010 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Sep 27, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An example embodiment is an apparatus for controlling a magnetic direction of a magnetic free layer. The apparatus includes a writer with a first magnetic write layer and a second magnetic write layer. Applying a write voltage across first and second magnetic write layers causes a magnetic anisotropy of one of the magnetic write layers to switch from parallel to the plane of the magnetic write layers to orthogonal to the plane of the magnetic write layers. The magnetic write layer with the magnetic anisotropy parallel to the plane of the magnetic write layers induces the magnetic direction in the magnetic free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.