Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode
US8483251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2011 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Nov 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2009
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.