Patent · US Active

Method of polishing a silicon-containing dielectric

US8486169B2 · kind B2 · utility

12Cited by
45References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 26, 2008
Grant dateJul 16, 2013
Priority date—
Expiry dateSep 24, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31053
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKa of about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.