Method of processing substrates
US8486198B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2006 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jul 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This invention relates to a method of processing substrates including: (a) etching, in a chamber, a generally vertical structure in a substrate using a cyclic process including an etch step using a reactive etch gas and a deposition step for depositing a protective polymer on to the side walls of that part of the structure which has already been etched by a preceding etch step or steps; and (b) cleaning, in the absence of any substrate, the chamber of material deposited thereon by the performance of the deposition step in step (a) characterized in that following the cleaning of the deposition derived material, the chamber is cleaned of material derived from the etchant gas by exposing the chamber to a plasma containing a mixture of O2 and at least the active element of elements of the etchant gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.