Method for manufacturing a gate-control diode semiconductor device
US8486754B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2012 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jun 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
Abstract
This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor device. When the gate voltage is relatively high, the channel under the gate has an n type and the device has a simple gate-control pn junction structure; by way of controlling the effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through the gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed. The present invention features capacity of manufacturing gate-control diode devices able to reduce the chip power consumption through the advantages of a high driving current and small sub-threshold swing, is especially applicable to the manufacturing of reading & writing devices having flat panel displays & phase change memory, and semiconductor devices based on flexible substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.