Patent · US Active

Semiconductor device comprising high-k metal gate electrode structures and precision eFuses formed in the active semiconductor material

US8486768B2 · kind B2 · utility

1Cited by

1References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Andreas Kurz · Oberursel, DE
Stephan Kronholz · Dresden, DE

Key dates

Filing date	May 24, 2011
Grant date	Jul 16, 2013
Priority date	—
Expiry date	Aug 16, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a complex semiconductor device, electronic fuses may be formed in the active semiconductor material by using a semiconductor material of reduced heat conductivity selectively in the fuse body, wherein, in some illustrative embodiments, the fuse body may be delineated by a non-silicided semiconductor base material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.