Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor device
US8486792B2 · kind B2 · utility
2Cited by
1References
27Claims
0Family size
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Key dates
| Filing date | May 11, 2009 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jan 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.