Patent · US Active

Thin film resistors and methods of manufacture

US8486796B2 · kind B2 · utility

4Cited by

6References

19Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

David L. Harmon · South Burlington, US
Joseph M. Lukaitis · Pleasant Valley, US
Stewart E. Rauch, III · Poughkeepsie, US
Robert R. Robison · Colchester, US
Dustin K. Slisher · Wappingers Falls, US
Jeffrey H. Sloan · South Burlington, US
Timothy D. Sullivan · Batavia, US
Kimball M. Watson · South Burlington, US

Key dates

Filing date	Nov 19, 2010
Grant date	Jul 16, 2013
Priority date	—
Expiry date	Mar 14, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a semiconductor structure includes: forming a resistor over a substrate; forming at least one first contact in contact with the resistor; and forming at least one second contact in contact with the resistor. The resistor is structured and arranged such that current flows from the at least one first contact to the at least one second contact through a central portion of the resistor. The resistor includes at least one extension extending laterally outward from the central portion in a direction parallel to the current flow. The method includes sizing the at least one extension based on a thermal diffusion length of the resistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.