Modulating implantation for improved workpiece splitting
US8487280B2 · kind B2 · utility
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14References
17Claims
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Key dates
| Filing date | Oct 21, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Apr 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first species is implanted into an entire surface of a workpiece and helium is implanted into this entire surface with a non-uniform dose. The first species may be, for example, hydrogen, helium, or nitrogen. The helium has a higher dose at a portion of a periphery of the workpiece. When the workpiece is split, this split is initiated at the periphery with the higher dose. The non-uniform dose may be formed by altering a scan speed of the workpiece or an ion beam current of the helium. In one instance, the non-uniform dose of the helium is larger than a uniform dose of the hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.