Semiconductor device and method of manufacturing the same
US8487305B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Mar 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, and an insulating layer that is provided on the semiconductor substrate, wherein, in an internal circuit formation region of the insulating layer, a via hole and an interconnect trench, that is formed on the via hole and communicates with the via hole, are provided, in the via hole and the interconnect trench, a conductor is provided so as to integrally fill the via hole and said interconnect trench, in a dicing region of the insulating layer, a groove portion and an opening, that communicates with the groove portion and is formed to cover the groove portion when the semiconductor substrate is seen in plane view, are formed, and in the groove portion and the opening, a conductor is provided so as to integrally fill the groove portion and the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.