Semiconductor light emitting diode chip and light emitting device using the same
US8487334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2011 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.