Optoelectronic device based on nanowires and corresponding processes
US8487340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2008 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Oct 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention relates to a method for making optoelectronic devices comprising nanowire semiconductors, in which: the nanowires (2) are formed on a substrate (1), said nanowires being capable of emitting a light beam; a first electric contact area is formed at the substrate, and a second electric contact area is formed at the nanowires, characterized in that the second electric contact area is formed on the edge of the nanowires (2) in direct contact with said nanowires, on a predetermined height (h) thereof and in the vicinity of their end opposite the substrate, as well as between said nanowires, the upper surface (20) of the nanowires being exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.