Method for improving selectivity of epi process
US8487354B2 · kind B2 · utility
3Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2009 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | May 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/8311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure over the substrate, forming a material layer over the substrate and the gate structure, implanting Ge, C, P, F, or B in the material layer, removing portions of the material layer overlying the substrate at either side of the gate structure, forming recesses in the substrate at either side of the gate structure, and depositing a semiconductor material in the recesses by an expitaxy process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.