Deep trench capacitor with conformally-deposited conductive layers having compressive stress
US8487405B2 · kind B2 · utility
11Cited by
1References
16Claims
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Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Aug 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
A high density deep trench MIM capacitor structure is provided wherein conductive-compressive-conformally applied layers of a semiconductor material, such as a Poly-SixGe1-x, are interleaved within MIM capacitor layers to counterbalance the tensile stresses created by such MIM capacitor layers. The interleaving of conductive-compressive-conformally applied material layers are adapted to counterbalance convex (upward) bowing of silicon wafers during the manufacturing process of high density deep trench MIM capacitor silicon devices to thereby help maximize production yields of such devices per wafer.
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