Scott W. Barry
4Patents
3h-index
6Co-inventors
39Inventor score
Filing activity: Feb 17, 2011 → Nov 23, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8487405B2 | Deep trench capacitor with conformally-deposited conductive layers having compressive stress | Electricity | 11 | Active |
| US9196672B2 | Semiconductor device having capacitor integrated therein | Electricity | 7 | Active |
| US8963287B1 | Deep trench capacitor with conformally-deposited conductive layers having compressive stress | Electricity | 5 | Active |
| US9520462B1 | Semiconductor device having capacitor integrated therein | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.