Semiconductor integrated circuit having a multi-chip structure
US8487431B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Mar 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit having a multi-chip structure includes a plurality of stacked semiconductor chips. At least one of the semiconductor chips includes first and second metal layers separately formed inside the semiconductor chip, a first internal circuit coupled in series between the first and second metal layers inside the semiconductor chip, a first metal path vertically formed over the second metal layer to a first side of the semiconductor chip, and a first through silicon via formed through the semiconductor chip from a second side of the semiconductor chip to the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.