Reference cell architectures for small memory array block activation
US8488357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Aug 29, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods for realizing reference currents to improve reliability of sensing operations of segmented semiconductor memory arrays have been achieved. Preferred embodiments of the invention comprise MRAM arrays but the invention could be applied to any other memories requiring access on small, segmented arrays. All embodiments of the invention comprise a folded bit lines scheme, either in adjacent bit lines or in segment-to-segment folded bit lines. In two embodiments alternate strapping of Poly-Si Word Lines in every second segment is achieved by metal layer of Read Word Line and Write Select Line. An embodiment has stored 1 and 0 cells on both sides of a selected segment to be read.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.