Patent · US Active

Methods of rejuvenating sputtering targets

US8491959B2 · kind B2 · utility

11Cited by

106References

15Claims

0Family size

Assignee

H.C. STARCK INC. · US

Inventors

Steven A. Miller · Pinellas Park, US
Olaf Schmidt-Park · Krefeld, DE
Prabhat Kumar · Framingham, US
Richard Wu · North Chelmsford, US
Shuwei Sun · Framingham, US
Stefan Zimmerman · Wörth an der Donau, DE

Key dates

Filing date	May 7, 2012
Grant date	Jul 23, 2013
Priority date	—
Expiry date	May 7, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/332
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a refractory metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.