Thin-film transistor producing method
US8492212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2010 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Feb 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as a mask to protect a channel region (27) when a source electrode and a drain electrode are formed by etching, but also as a mask when ions are implanted to form a source/drain regions (39). Thus, phosphorus, which is ion-implanted in the polycrystalline silicon film (26) to form the source/drain regions (39), is not implanted in the LDD region (38) and, accordingly, it is not necessary to additionally form a resist pattern to be used as a mask when ions are implanted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.