Removal of an overlap of dual stress liners
US8492218B1 · kind B1 · utility
0Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Apr 3, 2012 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Apr 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
Abstract
A first liner and a second liner are formed such that a peripheral portion of the second liner overlies a peripheral portion of the first liner. A photoresist layer is applied and patterned such that a sidewall of a patterned photoresist layer overlies an overlapping peripheral portion of the second liner An isotropic dry etch is performed to laterally etch the overlapping peripheral portion of the second liner from below the patterned photoresist layer. The patterned photoresist is subsequently removed, and a structure without an overlap of the first and second liners is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.