Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers

US8492228B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Effendi Leobandung · Stormville, US
• Junli Wang · Slingerlands, US

Key dates

• Filing date: Jul 12, 2012
• Grant date: Jul 23, 2013
• Expiry date: Jul 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0158

Abstract

A method includes forming a first gate stack over a portion of a fin, forming a dummy gate stack over the fin, growing an epitaxial material from exposed portions of the fin, forming a layer of dielectric material over the epitaxial material, the first gate stack, and the dummy gate stack, performing a planarizing process that removes portions of the layer of dielectric material, the first gate stack, and the dummy gate stack, pattering a first mask over portions of the layer of dielectric material and the dummy gate stack, forming a silicide material on exposed portions of the first gate stack, removing the first mask, pattering a second mask over portions of the layer of dielectric material and the first gate stack, removing a polysilicon portion of the dummy gate stack to define a cavity, removing the second mask, and forming a second gate stack in the cavity.