Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate
US8492281B2 · kind B2 · utility
1Cited by
1References
4Claims
0Family size
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Key dates
| Filing date | Jul 24, 2012 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Jul 24, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/02
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.