Patent · US Active

Homoepitaxial growth of SiC on low off-axis SiC wafers

US8492772B2 · kind B2 · utility

2Cited by

7References

12Claims

0Family size

Assignee

Norstel AB · SE

Inventors

Alexandre Ellison · Säter, SE
Christer Hallin · Chapel Hill, US
Björn Magnusson · Säter, SE
Peder Bergman · Säter, SE

Key dates

Filing date	Mar 12, 2009
Grant date	Jul 23, 2013
Priority date	—
Expiry date	Apr 9, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/931
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 μm arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.