Semiconductor device
US8492832B2 · kind B2 · utility
3Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
Abstract
A semiconductor device includes a semiconductor substrate including an active region defined by a device isolation layer, a trench extending across the active region, a buried gate filling a part of the trench and including a base portion, a first extension portion, and a second extension portion extending along an inner wall of the trench, and having different heights at sides of the base portion, and a capping layer formed on the buried gate and filling the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.