Atomic layer deposition encapsulation for power amplifiers in RF circuits
US8492908B2 · kind B2 · utility
5Cited by
10References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2012 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Oct 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.