Memory device readout using multiple sense times
US8493783B2 · kind B2 · utility
3Cited by
80References
16Claims
0Family size
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Key dates
| Filing date | Oct 30, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Oct 30, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for data storage includes storing data in a group of analog memory cells by writing respective storage values into the memory cells in the group. One or more of the memory cells in the group are read using a first readout operation that senses the memory cells with a first sense time. At least one of the memory cells in the group is read using a second readout operation that senses the memory cells with a second sense time, longer than the first sense time. The data stored in the group of memory cells is reconstructed based on readout results of the first and second readout operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.