Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
US8493789B2 · kind B2 · utility
15Cited by
1References
9Claims
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Key dates
| Filing date | Jun 3, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Aug 13, 2031 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA62B18/006
- WIPO fieldOther consumer goods
- WIPO sectorOther fields
Abstract
Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.