Method of making a FinFET device

US8497177B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Huicheng Chang · Tainan, TW
• Jeff J. Xu · Zhubeikou, TW
• Hung-Ta Lin · Hsinchu, TW
• Chun-Feng Nieh · Hsinchu, TW

Key dates

• Filing date: Oct 4, 2012
• Grant date: Jul 30, 2013
• Expiry date: Oct 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

A method for fabricating a fin field-effect transistor (FinFET) device includes providing a substrate having a first fin at a first location, and epitaxially growing a second fin on the substrate at the first location. The epitaxial growth is performed at a first temperature. The method further includes performing a thermal annealing at a second temperature in oxygen ambient on the substrate with the second fin thereon to grow an interface wrapping over the second fin. The second temperature is higher than the first temperature.