Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
US8497233B2 · kind B2 · utility
2Cited by
13References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 18, 2010 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Jun 23, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.