Semiconductor device including a MOS transistor and production method therefor
US8497548B2 · kind B2 · utility
30Cited by
58References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2010 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | May 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
Abstract
It is intended to provide a semiconductor device including a MOS transistor, comprising: a semiconductor pillar; a bottom doped region formed in contact with a lower part of the semiconductor pillar; a first gate formed around a sidewall of the semiconductor pillar through a first dielectric film therebetween; and a top doped region formed so as to at least partially overlap a top surface of the semiconductor pillar, wherein the top doped region has a top surface having an area greater than that of the top surface of the semiconductor pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.