Patent · US Active

Semiconductor device

US8497557B2 · kind B2 · utility

17Cited by
9References
1Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 5, 2010
Grant dateJul 30, 2013
Priority date
Expiry dateJun 13, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.