Nonvolatile memory cell, nonvolatile memory device and method for driving the same
US8498147B2 · kind B2 · utility
3Cited by
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4Claims
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Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.