Dual-port subthreshold SRAM cell
US8498174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Feb 2, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/287
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An innovative dual-port subthreshold static random access memory (SRAM) cell for sub-threshold voltage operation is disclosed. During write mode, the dual-port subthreshold SRAM cell would cut off the positive feedback loop of the inverters and utilize the reverse short-channel effect to enhance write capability. The single-ended read/write port structure further reduces power consumption of the lengthy bit line. Therefore, the dual-port subthreshold SRAM cell is a suitable for long operation in a first-in first-out memory system. Although the lower voltage reduces the stability of the memory cell, the dual-port subthreshold SRAM cell of the present invention can still stably operate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.