Full-field mask error enhancement function
US8498469B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2010 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Nov 5, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06V10/993
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A technique for determining a full-field Mask Error Enhancement Function (MEEF) associated with a mask pattern for use in a photo-lithographic process is described. In this technique, simulated wafer patterns corresponding to the mask pattern are generated at an image plane in an optical path associated with the photo-lithographic process. Then, the full-field MEEF is determined. This full-field MEEF includes MEEF values in multiple directions at positions along one or more contours that define boundaries of one or more features in the one or more simulated wafer patterns. Moreover, at least one of the MEEF values is at a position on a contour where a critical dimension for a feature associated with the contour is undefined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.