Method of using process-parameter prognostic system for predicting shape of semiconductor structure
US8498731B2 · kind B2 · utility
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Key dates
| Filing date | Aug 11, 2011 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Aug 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.