Methods for depositing bevel protective film
US8501283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2010 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Jun 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.