Methods of inspecting and manufacturing semiconductor wafers
US8501503B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2012 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Apr 26, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/21
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of manufacturing a plurality of semiconductor wafers comprising micro-inspecting at least one location within at least one micro-inspected pattern field and determining at least one parameter value representing a property of the wafer at the micro-inspected location, macro-inspecting a plurality of locations within the at least one micro-inspected pattern field and determining, for each macro-inspected location of the macro-inspected pattern field, at least one parameter value representing the property of the wafer at the macro-inspected location based on the light intensity recorded for the macro-inspected location and on the at least one parameter value representing the property of the wafer at the micro-inspected location of this pattern field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.