Patent · US Active

Methods of inspecting and manufacturing semiconductor wafers

US8501503B2 · kind B2 · utility

0Cited by
1References
32Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 26, 2012
Grant dateAug 6, 2013
Priority date
Expiry dateApr 26, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/21
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method of manufacturing a plurality of semiconductor wafers comprising micro-inspecting at least one location within at least one micro-inspected pattern field and determining at least one parameter value representing a property of the wafer at the micro-inspected location, macro-inspecting a plurality of locations within the at least one micro-inspected pattern field and determining, for each macro-inspected location of the macro-inspected pattern field, at least one parameter value representing the property of the wafer at the macro-inspected location based on the light intensity recorded for the macro-inspected location and on the at least one parameter value representing the property of the wafer at the micro-inspected location of this pattern field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.