Patent · US Active

Dummy structures and methods

US8501576B2 · kind B2 · utility

1Cited by

0References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Frank Huebinger · Poughkeepsie, US
Steffen Rothenhaeusser · Dresden, DE
Kerstin Kaemmer · Radebeul, DE

Key dates

Filing date	Apr 21, 2011
Grant date	Aug 6, 2013
Priority date	—
Expiry date	Oct 31, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0227
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern. The method further comprises introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.