Method in the microelectronics fields of forming a monocrystalline layer
US8501589B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2009 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.