Patent · US Active

Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient

US8501596B2 · kind B2 · utility

1Cited by

5References

12Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Benjamin Vincent · San Francisco, US
Vincent Destefanis · Yssingeaux, FR

Key dates

Filing date	Sep 16, 2009
Grant date	Aug 6, 2013
Priority date	—
Expiry date	May 7, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/751
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A manufacturing method of a microelectronic device including at least one semi-conductor zone which rests on a support and which exhibits a germanium concentration gradient in a direction parallel to the principal pane of the support.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.