Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate
US8501598B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 25, 2010 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Mar 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S1) of forming a first epitaxial layer; a trench forming step (S2) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S3, S4, S5) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.