Methods and apparatus for conformal doping
US8501605B2 · kind B2 · utility
0Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Jul 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.