Method for manufacturing fine-pitch bumps and structure thereof
US8501614B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Mar 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing fine-pitch bumps comprises the steps of providing a silicon substrate; forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first zones and a plurality of second zones; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer to form a plurality of opening slots; forming a plurality of copper bumps at the opening slots, wherein each of the copper bumps comprises a first top surface and a ring surface; heating the photoresist layer to form a plurality of body portions and a plurality of removable portions; etching the photoresist layer; and removing the second zones to enable each of the first zones to form an under bump metallurgy layer having a bearing portion and an extending portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.