Profile control in dielectric etch
US8501627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2008 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Nov 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a dielectric layer is provided. The dielectric layer is disposed over a substrate and below a patterned mask having a line-space pattern. The method includes (a) providing an etchant gas comprising CF4, COS, and an oxygen containing gas, (b) forming a plasma from the etchant gas, and (c) etching the dielectric layer into the line-space pattern through the mask with the plasma from the etchant gas. The gas flow rate of CF4 may have a ratio greater than 50% of a total gas flow rate of all reactive gas components. The gas flow rate of COS may be between 1% and 50%. The method reduces bowing in etching of the dielectric layer by adding COS to the etchant gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.